| PART |
Description |
Maker |
| AA143 |
Gold Bonded Germanium Diodes 0.04 A, GERMANIUM, SIGNAL DIODE, DO-7
Gold Bonded Germanium Diodes
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N480 |
GOLD BONDED DIODES
|
BC
|
| 1N58 |
GOLD BONDED GERMANIUM DIODE
|
New Jersey Semi-Conduct...
|
| 1N35 |
GOLD BONDED GERMANIUM DIODE
|
New Jersey Semi-Conduct...
|
| 1N60 |
GOLD BONDED GERMANIUM DIODE
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC
|
| OA95 |
Gold Bonded Germanium Diode
|
BKC Semiconductors
|
| AA139 |
GOLD BONDED GERMANIUM DIODE
|
ETC[ETC]
|
| 1N268 |
Gold Bonded Germanium Diodes in DO-7 Package
|
New Jersey Semi-Conductor Products, Inc.
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
